MOSFET

IPB80N04S4L04ATMA1

Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101

Infineon Technologies AG

製品技術仕様

• RoHS (Unión Europea)

  Compliant with Exemption

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.29.00.55

• SVHC

  Yes

• Índice de SEP por encima del límite autorizado

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  2.2

• Maximum Continuous Drain Current (A)

  80

• Maximum Drain-Source Resistance (mOhm)

  4@10V

• Typical Gate Charge @ Vgs (nC)

  46@10V

• Typical Gate Charge @ 10V (nC)

  46

• Typical Input Capacitance @ Vds (pF)

  3610@25V

• Maximum Power Dissipation (mW)

  71000

• Typical Fall Time (ns)

  31

• Typical Rise Time (ns)

  12

• Typical Turn-Off Delay Time (ns)

  22

• Typical Turn-On Delay Time (ns)

  7

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  5.1@4.5V|3.4@10V|3.7@10V|4.8@4.5V

• Mounting

  Surface Mount

• Package Height

  4.4

• Package Width

  9.25

• Package Length

  10

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  3

• Lead Shape

  Gull-wing