製品技術仕様
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
3.3
Maximum Continuous Drain Current (A)
84
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
2.9@10V
Typical Gate Charge @ Vgs (nC)
56@10V
Typical Gate Charge @ 10V (nC)
56
Typical Input Capacitance @ Vds (pF)
4100@30V
Maximum Power Dissipation (mW)
38000
Typical Fall Time (ns)
11
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
30
Typical Turn-On Delay Time (ns)
16
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
2.6@10V|3@6V
Mounting
Through Hole
Package Height
16
Package Width
4.7
Package Length
10.5
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220FP
Pin Count
3
Lead Shape
Through Hole