IGBTチップ

IKD04N60RATMA1

Trans IGBT Chip N-CH 600V 8A 75W 3-Pin(2+Tab) DPAK T/R

Infineon Technologies AG

製品技術仕様

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  NRND

• Codice HTS

  8541.21.00.95

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Technology

  Trench Stop

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  600

• Typical Collector-Emitter Saturation Voltage (V)

  1.65

• Maximum Continuous DC Collector Current (A)

  8

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  75

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  2.41(Max)

• Package Width

  6.22(Max)

• Package Length

  6.73(Max)

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3

• Lead Shape

  Gull-wing