IGBTモジュール

FF150R12KT3GHOSA1

Trans IGBT Module N-CH 1200V 225A 780W 7-Pin 62MM-1 Tray

Infineon Technologies AG

製品技術仕様

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Channel Type

  N

• Configuration

  Dual

• Typical Collector-Emitter Saturation Voltage (V)

  1.7

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  780

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  225

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  125

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  29

• Package Width

  61.4

• Package Length

  106.4

• PCB changed

  7

• Supplier Package

  62MM-1

• Pin Count

  7