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製品技術仕様
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Quad
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
4
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
3.1
Maximum Drain-Source Resistance (mOhm)
110@10V
Typical Gate Charge @ Vgs (nC)
1.7@5V, 3@10V
Typical Gate Charge @ 10V (nC)
3
Typical Input Capacitance @ Vds (pF)
162@50V
Maximum Power Dissipation (mW)
1900
Typical Fall Time (ns)
1.8
Typical Rise Time (ns)
1.2
Typical Turn-Off Delay Time (ns)
7.2
Typical Turn-On Delay Time (ns)
4.1
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
0.75(Max)
Package Width
4.5
Package Length
5
PCB changed
12
Supplier Package
WDFN EP
Pin Count
12
Lead Shape
No Lead
注文数量