MOSFET

CSD19538Q2T

Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R

Texas Instruments

製品技術仕様

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Quad Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3.8

• Maximum Continuous Drain Current (A)

  14.4

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  59@10V

• Typical Gate Charge @ Vgs (nC)

  4.3@10V

• Typical Gate Charge @ 10V (nC)

  4.3

• Typical Gate to Drain Charge (nC)

  0.8

• Typical Input Capacitance @ Vds (pF)

  349@50V

• Maximum Power Dissipation (mW)

  2500

• Typical Fall Time (ns)

  2

• Typical Rise Time (ns)

  3

• Typical Turn-Off Delay Time (ns)

  7

• Typical Turn-On Delay Time (ns)

  5

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Gate Threshold Voltage (V)

  3.2

• Mounting

  Surface Mount

• Package Height

  0.75(Max)

• Package Width

  2.1(Max)

• Package Length

  2.1(Max)

• PCB changed

  6

• Standard Package Name

  SON

• Supplier Package

  WSON EP

• Pin Count

  6

• Lead Shape

  No Lead