MOSFET

BSZ018NE2LSATMA1

Trans MOSFET N-CH 25V 23A 8-Pin TSDSON EP T/R

Infineon Technologies AG

製品技術仕様

• 유럽 연합 RoHS 명령어

  Compliant with Exemption

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  BSZ018NE2LSATMA1

• SVHC

  Yes

• SVHC 기준 초과

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  25

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2

• Maximum Continuous Drain Current (A)

  23

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  1.8@10V

• Typical Gate Charge @ Vgs (nC)

  18.6@4.5V|39@10V

• Typical Gate Charge @ 10V (nC)

  39

• Typical Input Capacitance @ Vds (pF)

  2800@12V

• Maximum Power Dissipation (mW)

  2100

• Typical Fall Time (ns)

  3.4

• Typical Rise Time (ns)

  4.4

• Typical Turn-Off Delay Time (ns)

  26

• Typical Turn-On Delay Time (ns)

  5.5

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  1.5@10V|1.9@4.5V

• Mounting

  Surface Mount

• Package Height

  1

• Package Width

  3.3

• Package Length

  3.3

• PCB changed

  8

• Standard Package Name

  SON

• Supplier Package

  TSDSON EP

• Pin Count

  8

• Lead Shape

  No Lead