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BSS84AKS115|NEXPERIA|simage
BSS84AKS115|NEXPERIA|limage
MOSFET

BSS84AKS,115

Trans MOSFET P-CH 50V 0.16A 6-Pin TSSOP T/R Automotive AEC-Q101

Nexperia
データシート 

製品技術仕様
  • EU RoHS
    Compliant
  • Part Status
    Active
  • SVHC
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Small Signal
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    50
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    2.1
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.16
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    7500@10V
  • Typical Gate Charge @ Vgs (nC)
    0.26@5V
  • Typical Gate to Drain Charge (nC)
    0.09
  • Typical Gate to Source Charge (nC)
    0.12
  • Typical Input Capacitance @ Vds (pF)
    24@25V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.3@25V
  • Minimum Gate Threshold Voltage (V)
    1.1
  • Typical Output Capacitance (pF)
    4.5
  • Maximum Power Dissipation (mW)
    445
  • Typical Fall Time (ns)
    25
  • Typical Rise Time (ns)
    11
  • Typical Turn-Off Delay Time (ns)
    48
  • Typical Turn-On Delay Time (ns)
    13
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    0.64
  • Typical Diode Forward Voltage (V)
    0.85
  • Maximum Diode Forward Voltage (V)
    1.2
  • Typical Gate Threshold Voltage (V)
    1.6
注文数量

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