製品技術仕様
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
22
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
80
Maximum Gate-Source Leakage Current (nA)
500
Maximum IDSS (uA)
1200
Typical Input Capacitance @ Vds (pF)
8000@10V
Maximum Power Dissipation (mW)
600000
Typical Fall Time (ns)
40
Typical Rise Time (ns)
30
Typical Turn-Off Delay Time (ns)
80
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Packaging
Tray
Mounting
Screw
Package Height
16
Package Width
45.6
Package Length
122
PCB changed
10
Pin Count
10