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BSC0921NDIATMA1|INFINEON|simage
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MOSFET

BSC0921NDIATMA1

Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R

Infineon Technologies AG
データシート 

製品技術仕様
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    17@Q1|31@Q2
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    5@10V@Q1|1.6@10V@Q2
  • Typical Gate Charge @ Vgs (nC)
    5.9@4.5V@Q1|22@4.5V@Q2
  • Typical Gate to Drain Charge (nC)
    1.9@Q 1|7@Q 2
  • Typical Gate to Source Charge (nC)
    2.2@Q 1|6.7@Q 2
  • Typical Reverse Recovery Charge (nC)
    5
  • Typical Input Capacitance @ Vds (pF)
    770@15V@Q1|2700@15V@Q2
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    44@15V@Q 1|150@15V@Q 2
  • Minimum Gate Threshold Voltage (V)
    1.2
  • Typical Output Capacitance (pF)
    300@Q1|1100@Q2
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    2.4@Q 1|3.6@Q 2
  • Typical Rise Time (ns)
    3.4@Q 1|5@Q 2
  • Typical Turn-Off Delay Time (ns)
    12@Q 1|25@Q 2
  • Typical Turn-On Delay Time (ns)
    5@Q 2|1.8@Q 1
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    5.8@4.5V|3.9@10V@Q1|1.7@4.5V|1.2@10V@Q2
  • Maximum Power Dissipation on PCB @ TC=25°C (W)
    1
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    160
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    125
  • Typical Diode Forward Voltage (V)
    0.9@Q 1|0.56@Q 2
  • Typical Gate Plateau Voltage (V)
    2.8@Q 1|2.5@Q 2
  • Maximum Diode Forward Voltage (V)
    1@Q 1|0.7@Q 2
  • Minimum Gate Resistance (Ohm)
    0.4@Q 1|0.3@Q 2
  • Maximum Gate Resistance (Ohm)
    1.4@Q 1|1@Q 2
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    17@Q 1|31@Q 2
  • Mounting
    Surface Mount
  • Package Height
    1
  • Package Width
    6
  • Package Length
    5
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    TISON EP
  • Pin Count
    8
  • Lead Shape
    No Lead
注文数量

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