製品技術仕様
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.8
Maximum Continuous Drain Current (A)
12.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
66@10V
Typical Gate Charge @ Vgs (nC)
3@4.5V|6.5@10V
Typical Gate Charge @ 10V (nC)
6.5
Typical Input Capacitance @ Vds (pF)
415@50V
Maximum Power Dissipation (mW)
3100
Typical Fall Time (ns)
2
Typical Rise Time (ns)
2
Typical Turn-Off Delay Time (ns)
15
Typical Turn-On Delay Time (ns)
4
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
54@10V|72@4.5V
Mounting
Surface Mount
Package Height
0.78
Package Width
3
Package Length
3
PCB changed
8
Standard Package Name
DFN
Supplier Package
DFN-A EP
Pin Count
8
注文数量