MOSFET

2SJ360(TE12L,F)

Trans MOSFET P-CH Si 60V 1A 4-Pin(3+Tab) PW-Mini T/R

Toshiba

製品技術仕様

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  1

• Maximum Drain-Source Resistance (mOhm)

  730@10V

• Typical Gate Charge @ Vgs (nC)

  6.5@10V

• Typical Gate Charge @ 10V (nC)

  6.5

• Typical Input Capacitance @ Vds (pF)

  155@10V

• Maximum Power Dissipation (mW)

  1500

• Typical Fall Time (ns)

  20

• Typical Rise Time (ns)

  17

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.6(Max) mm

• Package Width

  2.5 mm

• Package Length

  4.6(Max) mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  SOT

• Supplier Package

  PW-Mini

• Pin Count

  4