MOSFET

SIRA99DP-T1-GE3

Trans MOSFET P-CH 30V 195A 8-Pin PowerPAK SO EP T/R

Vishay

Spécifications techniques du produit

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  16

• Maximum Gate Threshold Voltage (V)

  2.5

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  195

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  1.7@10V

• Typical Gate Charge @ Vgs (nC)

  172.5@10V, 84@4.5V

• Typical Gate Charge @ 10V (nC)

  172.5

• Typical Gate to Drain Charge (nC)

  27.5

• Typical Gate to Source Charge (nC)

  35.6

• Typical Reverse Recovery Charge (nC)

  125

• Typical Input Capacitance @ Vds (pF)

  10995@15V

• Typical Reverse Transfer Capacitance @ Vds (pF)

  510@15V

• Minimum Gate Threshold Voltage (V)

  1

• Typical Output Capacitance (pF)

  5000

• Maximum Power Dissipation (mW)

  6350

• Typical Fall Time (ns)

  57, 16

• Typical Rise Time (ns)

  183, 19

• Typical Turn-Off Delay Time (ns)

  51, 64

• Typical Turn-On Delay Time (ns)

  69, 23

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  2.2@4.5V, 1.3@10V

• Maximum Power Dissipation on PCB @ TC=25°C (W)

  6.35

• Maximum Pulsed Drain Current @ TC=25°C (A)

  400

• Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

  20

• Typical Diode Forward Voltage (V)

  0.71

• Typical Gate Plateau Voltage (V)

  3.25

• Typical Reverse Recovery Time (ns)

  75

• Maximum Diode Forward Voltage (V)

  1.1

• Minimum Gate Resistance (Ohm)

  0.5

• Maximum Gate Resistance (Ohm)

  2.2

• Maximum Positive Gate-Source Voltage (V)

  16

• Maximum Continuous Drain Current on PCB @ TC=25°C (A)

  47.9

• Mounting

  Surface Mount

• Package Height

  1.07(Max)

• Package Width

  5.89

• Package Length

  4.9

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  PowerPAK SO EP

• Pin Count

  8

• Lead Shape

  No Lead

• Family/Series

  SiRA99DP

• ROHS Version

  2011/65/EU, 2015/863

• MSL

  1