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RYM002N05T2CL|ROHM|simage
RYM002N05T2CL|ROHM|limage
MOSFET

RYM002N05T2CL

Trans MOSFET N-CH 50V 0.2A 3-Pin VMT T/R

ROHM Semiconductor
Fiches techniques 

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Spécifications techniques du produit
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    50
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    0.8
  • Operating Junction Temperature (°C)
    150
  • Maximum Continuous Drain Current (A)
    0.2
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    2200@4.5V
  • Typical Input Capacitance @ Vds (pF)
    26@10V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    3@10V
  • Minimum Gate Threshold Voltage (V)
    0.3
  • Typical Output Capacitance (pF)
    6
  • Maximum Power Dissipation (mW)
    150
  • Typical Fall Time (ns)
    43
  • Typical Rise Time (ns)
    8
  • Typical Turn-Off Delay Time (ns)
    17
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    8
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    0.8
  • Maximum Diode Forward Voltage (V)
    1.2
  • Mounting
    Surface Mount
  • Package Height
    0.45(Max)
  • Package Width
    0.9(Max)
  • Package Length
    1.3(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    VMT
  • Pin Count
    3
  • Lead Shape
    Flat
Quantité de commande

Documentation et ressources

Fiches techniques
Ressources de conception