MOSFET

IRL80HS120

Trans MOSFET N-CH Si 80V 6A 6-Pin PQFN EP T/R

Infineon Technologies AG

Spécifications techniques du produit

• 유럽 연합 RoHS 명령어

  Compliant with Exemption

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.29.00.55

• SVHC

  Yes

• SVHC 기준 초과

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Quad Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2

• Maximum Continuous Drain Current (A)

  6

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  32@10V

• Typical Gate Charge @ Vgs (nC)

  4.7@4.5V

• Typical Input Capacitance @ Vds (pF)

  540@25V

• Maximum Power Dissipation (mW)

  2500

• Typical Fall Time (ns)

  10

• Typical Rise Time (ns)

  22

• Typical Turn-Off Delay Time (ns)

  9.2

• Typical Turn-On Delay Time (ns)

  7.6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  25@10V, 32@4.5V

• Mounting

  Surface Mount

• Package Height

  0.88

• Package Width

  2

• Package Length

  2

• PCB changed

  6

• Standard Package Name

  QFN

• Supplier Package

  PQFN EP

• Pin Count

  6