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Spécifications techniques du produit
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Unconfirmed
Codice HTS
8541.21.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Material
GaN
Configuration
Single Dual Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
5.5
Operating Junction Temperature (°C)
-40 to 150
Maximum Continuous Drain Current (A)
21
Maximum Drain-Source Resistance (mOhm)
3.3@5V
Typical Gate Charge @ Vgs (nC)
11@5V
Typical Input Capacitance @ Vds (pF)
1200@50V
Maximum Power Dissipation (mW)
3300
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
0.98(Max)
Package Width
3
Package Length
5
PCB changed
6
Supplier Package
TSON
Pin Count
6
Quantité de commande