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FDC610PZ|ONSEMI|limage
FDC610PZ|ONSEMI|simage
MOSFET

FDC610PZ

Trans MOSFET P-CH 30V 4.9A 6-Pin TSOT-23 T/R

onsemi
Fiches techniques 

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Spécifications techniques du produit
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Process Technology
    0.35um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±25
  • Maximum Continuous Drain Current (A)
    4.9
  • Maximum Drain-Source Resistance (mOhm)
    42@10V
  • Typical Gate Charge @ Vgs (nC)
    17@10V
  • Typical Gate Charge @ 10V (nC)
    17
  • Typical Input Capacitance @ Vds (pF)
    755@15V
  • Maximum Power Dissipation (mW)
    1600
  • Typical Fall Time (ns)
    23
  • Typical Rise Time (ns)
    4
  • Typical Turn-Off Delay Time (ns)
    33
  • Typical Turn-On Delay Time (ns)
    7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.85
  • Package Width
    1.5
  • Package Length
    2.95
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    TSOT-23
  • Pin Count
    6
  • Lead Shape
    Gull-wing
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Documentation et ressources

Fiches techniques
Ressources de conception