MOSFET

BSC152N15LS5ATMA1

Trans MOSFET N-CH 150V 8.9A 8-Pin TDSON EP T/R

Infineon Technologies AG

Spécifications techniques du produit

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  150

• Maximum Gate-Source Voltage (V)

  20

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  8.9

• Maximum Drain-Source Resistance (mOhm)

  15.2@10V

• Typical Gate Charge @ Vgs (nC)

  23@10V, 12.2@4.5V

• Typical Gate Charge @ 10V (nC)

  23

• Typical Input Capacitance @ Vds (pF)

  1500@75V

• Maximum Power Dissipation (mW)

  2500

• Typical Fall Time (ns)

  2.2

• Typical Rise Time (ns)

  1.2

• Typical Turn-Off Delay Time (ns)

  14.8

• Typical Turn-On Delay Time (ns)

  6.5

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.2(Max)

• Package Width

  6.1(Max)

• Package Length

  5.35(Max)

• PCB changed

  8

• Supplier Package

  TDSON EP

• Pin Count

  8

• Family/Series

  BSC152N15LS5

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  5000

• MSL

  1