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STMicroelectronicsSTD10N60M2MOSFETs
Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4 | |
| 7.5 | |
| 10000 | |
| 1 | |
| 600@10V | |
| 13.5@10V | |
| 13.5 | |
| 400@100V | |
| 85000 | |
| 13.2 | |
| 8 | |
| 32.5 | |
| 8.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) mm |
| Package Width | 6.2(Max) mm |
| Package Length | 6.6(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this STD10N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 85000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with mdmesh technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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