| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 1.5 | |
| -55 to 150 | |
| 0.66 | |
| 1 | |
| 385@4.5V | |
| 0.8@4.5V | |
| 0.3 | |
| 0.06 | |
| 0.6 | |
| 270 | |
| 10 | |
| 16 | |
| 10 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 320@4.5V|560@2.5V | |
| 0.27 | |
| 1 | |
| 460 | |
| 0.8 | |
| 1.8 | |
| 20 | |
| 1.2 | |
| 0.2 | |
| 1.7 | |
| 12 | |
| 0.66 | |
| Mounting | Surface Mount |
| Package Height | 1(Max) mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 6 | |
| Lead Shape | Gull-wing |
This SI1902DL-T1-E3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 270 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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