STMicroelectronicsLET9060SRF MOSFETs
Trans RF MOSFET N-CH 80V 12A 3-Pin PowerSO-10RF (Straight lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 15 | |
| 10(Min) | |
| 12 | |
| 1000 | |
| 1 | |
| 74@26V | |
| 2.8@26V | |
| 40@26V | |
| 2.5(Min) | |
| 170000 | |
| 80(Typ) | |
| 17.2 | |
| 1000 | |
| 61 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 mm |
| Package Width | 9.4 mm |
| Package Length | 9.5 mm |
| PCB changed | 3 |
| Standard Package Name | SO |
| Supplier Package | PowerSO-10RF (Straight lead) |
| 3 | |
| Lead Shape | Flat |
Ideal for radio frequency environments this LET9060S RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 170000 mW. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
| EDA / CAD Models |
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