| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Obsolete |
| Código HTS | 8541.29.00.95 |
| Automotive | Yes |
| PPAP | Yes |
| Categoría del producto | Power MOSFET |
| Configuration | Dual Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 7@N Channel|5@P Channel |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 28@10V@N Channel|52@10V@P Channel |
| Typical Gate Charge @ Vgs (nC) | 11.4@10V@N Channel|9.6@10V@P Channel |
| Typical Gate Charge @ 10V (nC) | 11.4@N Channel|9.6@P Channel |
| Typical Gate to Drain Charge (nC) | 2.1@N Channel|1.7@P Channel |
| Typical Gate to Source Charge (nC) | 1.7@N Channel|2.2@P Channel |
| Typical Reverse Recovery Charge (nC) | 9@N Channel|6@P Channel |
| Typical Input Capacitance @ Vds (pF) | 575@15V@N Channel|528@15V@P Channel |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.1@15V@N Channel|6@15V@P Channel |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Output Capacitance (pF) | 145@N Channel|132@P Channel |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 3@N Channel|9@P Channel |
| Typical Rise Time (ns) | 5@N Channel|13@P Channel |
| Typical Turn-Off Delay Time (ns) | 23@N Channel|14@P Channel |
| Typical Turn-On Delay Time (ns) | 8@N Channel|7@P Channel |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 24@4.5V|19@10V@N Channel65@4.5V|42@10V@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.6 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 135 |
| Typical Diode Forward Voltage (V) | 0.75@N Channel|0.88@P Channel |
| Typical Gate Plateau Voltage (V) | 3@N Channel |
| Typical Reverse Recovery Time (ns) | 19 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate Threshold Voltage (V) | 1.9@N Channel|1.7@P Channel |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 7@N Channel|5@P Channel |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Pin Count | 8 |
| Lead Shape | Gull-wing |