MOSFETs

FDS8958A-F085

Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R Automotive AEC-Q101

onsemi

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.95

• Automotive

  Yes

• PPAP

  Yes

• Category

  Power MOSFET

• Configuration

  Dual Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N|P

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  7@N Channel|5@P Channel

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  28@10V@N Channel|52@10V@P Channel

• Typical Gate Charge @ Vgs (nC)

  11.4@10V@N Channel|9.6@10V@P Channel

• Typical Gate Charge @ 10V (nC)

  11.4@N Channel|9.6@P Channel

• Typical Gate to Drain Charge (nC)

  2.1@N Channel|1.7@P Channel

• Typical Gate to Source Charge (nC)

  1.7@N Channel|2.2@P Channel

• Typical Reverse Recovery Charge (nC)

  9@N Channel|6@P Channel

• Typical Input Capacitance @ Vds (pF)

  575@15V@N Channel|528@15V@P Channel

• Typical Reverse Transfer Capacitance @ Vds (pF)

  2.1@15V@N Channel|6@15V@P Channel

• Minimum Gate Threshold Voltage (V)

  1

• Typical Output Capacitance (pF)

  145@N Channel|132@P Channel

• Maximum Power Dissipation (mW)

  2000

• Typical Fall Time (ns)

  3@N Channel|9@P Channel

• Typical Rise Time (ns)

  5@N Channel|13@P Channel

• Typical Turn-Off Delay Time (ns)

  23@N Channel|14@P Channel

• Typical Turn-On Delay Time (ns)

  8@N Channel|7@P Channel

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  24@4.5V|19@10V@N Channel65@4.5V|42@10V@P Channel

• Maximum Power Dissipation on PCB @ TC=25°C (W)

  1.6

• Maximum Pulsed Drain Current @ TC=25°C (A)

  20

• Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

  135

• Typical Diode Forward Voltage (V)

  0.75@N Channel|0.88@P Channel

• Typical Gate Plateau Voltage (V)

  3@N Channel

• Typical Reverse Recovery Time (ns)

  19

• Maximum Diode Forward Voltage (V)

  1.2

• Typical Gate Threshold Voltage (V)

  1.7@P Channel|1.9@N Channel

• Maximum Positive Gate-Source Voltage (V)

  20

• Maximum Continuous Drain Current on PCB @ TC=25°C (A)

  7@N Channel|5@P Channel

• Mounting

  Surface Mount

• Package Height

  1.5(Max)

• Package Width

  3.9

• Package Length

  4.9

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC

• Pin Count

  8

• Lead Shape

  Gull-wing