| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Dual Dual Source |
| Process Technology | TMOS |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 150 |
| Maximum Gate-Source Voltage (V) | ±20@N Channel|±25@P Channel |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 2.4@N Channel|0.9@P Channel |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 155@10V@N Channel|1200@10V@P Channel |
| Typical Gate Charge @ Vgs (nC) | 4.4@10V@N Channel|2.9@10V@P Channel |
| Typical Gate Charge @ 10V (nC) | 4.4@N Channel|2.9@P Channel |
| Typical Input Capacitance @ Vds (pF) | 279@75V@N Channel|162@75V@P Channel |
| Maximum Power Dissipation (mW) | 1900 |
| Typical Fall Time (ns) | 2.2@N Channel|6.3@P Channel |
| Typical Rise Time (ns) | 1.3@N Channel|1.6@P Channel |
| Typical Turn-Off Delay Time (ns) | 9.1@N Channel|7.4@P Channel |
| Typical Turn-On Delay Time (ns) | 5.4@N Channel|5.2@P Channel |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) |
| Package Width | 3 |
| Package Length | 3 |
| PCB changed | 8 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| Pin Count | 8 |
