| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | COMPONENTS |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Power MOSFET |
| Configuration | Dual |
| Process Technology | 0.18um to 2um |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±16@N Channel|±25@P Channel |
| Maximum Gate Threshold Voltage (V) | 3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 2.5@N Channel|2@P Channel |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 95@10V@N Channel|130@10V@P Channel |
| Typical Gate Charge @ Vgs (nC) | 4.7@10V@N Channel|4.1@10V@P Channel |
| Typical Gate Charge @ 10V (nC) | 4.7@N Channel|4.1@P Channel |
| Typical Gate to Drain Charge (nC) | 0.6@N Channel|0.4@P Channel |
| Typical Gate to Source Charge (nC) | 0.9@N Channel|0.8@P Channel |
| Typical Input Capacitance @ Vds (pF) | 282@15V@N Channel|185@15V@P Channel |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 20@15V@N Channel|26@15V@P Channel |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Output Capacitance (pF) | 49@N Channel|56@P Channel |
| Maximum Power Dissipation (mW) | 960 |
| Typical Fall Time (ns) | 1.5@N Channel|2@P Channel |
| Typical Rise Time (ns) | 6@N Channel|13@P Channel |
| Typical Turn-Off Delay Time (ns) | 19@N Channel|11@P Channel |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 73@10V|90@4.5V@N Channel|95@10V|142@4.5V@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.96 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 8 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 180 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate Plateau Voltage (V) | 2.8 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate Threshold Voltage (V) | 1.8 |
| Maximum Positive Gate-Source Voltage (V) | 16@N Channel|25@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 2.5@N Channel|2@P Channel |
| Mounting | Surface Mount |
| Package Height | 0.85 mm |
| Package Width | 1.5 mm |
| Package Length | 2.95 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | TSOT-23 |
| Pin Count | 6 |
| Lead Shape | Gull-wing |
