Nexperia NSF series silicon carbide MOSFETs
EVs are one of the “must-have” products today, and auto manufacturers are coming out with new models constantly to satiate demand. Perhaps more important than EVs, though, is the network of residential and public chargers they must depend on. In a charger, dependability, safety, and speed are vitally important, so the components in its circuit design must be chosen carefully. This article explores Nexperia’s Silicon Carbide MOSFETs, which feature excellent RDSon temperature stability, fast switching speeds and high short-circuit ruggedness.
For safe, robust and reliable power switching
Addressing the growing demand for high-power and high-voltage industrial applications, Nexperia’s Silicon Carbide MOSFETs, with their excellent RDSon temperature stability, fast switching speed, and high short-circuit ruggedness, make them the product of choice for E-vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Design benefits
- Very low switching losses
- Fast reverse recovery
- Fast switching speed
- Temperature-independent turn-off switching losses
- Very fast and robust intrinsic body diode
Key applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
Key technical features
- Best-in-class RDSon temperature dependency
- Superior gate charge and beneficial gate charge ratio
- Low power consumption of gate drivers
- High tolerance against parasitic turn-on
- Ultra-small threshold voltage tolerance
- Robust body diode with very low forward voltage
- Lower leakage current up to 1200 V
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