ISSI's Latest High-Speed Asynchronous SRAM

ISSI's high-speed, 8 Mb asynchronous CMOS static RAM with ECC is ideal for a broad range of low power consumption devices.

Learn more about the 8 Mb asynchronous CMOS static RAM with ECC offering from ISSI.

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IS61WV51216EDBLL-10BLI

Integrated Silicon Solution Inc SRAM Chip View

The ISSI IS61WV51216EDBLL is a high-speed, 8 Mb asynchronous CMOS static RAM with ECC that is ideal for a broad range of low power consumption devices. It’s organized as 512 K words by 16 bits and is fabricated using ISSI’s high-performance, low-power CMOS process. The solution offers high speed access times of either 8, 10, or 20 ns and the overall design provides for multiple center power and ground pins for greater noise immunity. It is fully static; no clock or refresh required. 


Memory expansion is easy with the Chip Enable (CE) and Output Enable (OE) inputs. Active Write Enable controls both writing and reading of the memory. A data byte allows Upper Byte and Lower Byte access. When CE is deselected the device assumes an even lower-power standby mode that gives applications longer life. IS61WV51216EDBLLis a durable and high-performance memory solution for broad use. It comes in 48-ball miniBGA and TSOP packages temperature rated for Industrial and Automotive applications and has the long term support of ISSI

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