| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single Triple Source |
| Process Technology | DTMOSIV |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 600 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 3.7 |
| Maximum Continuous Drain Current (A) | 30.8 |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 98@10V |
| Typical Gate Charge @ Vgs (nC) | 86@10V |
| Typical Gate Charge @ 10V (nC) | 86 |
| Typical Input Capacitance @ Vds (pF) | 3000@300V |
| Maximum Power Dissipation (mW) | 240000 |
| Typical Fall Time (ns) | 8.5 |
| Typical Rise Time (ns) | 32 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Surface Mount |
| Package Height | 0.85 |
| Package Width | 8 |
| Package Length | 8 |
| PCB changed | 5 |
| Standard Package Name | DFN |
| Supplier Package | DFN EP |
| Pin Count | 5 |
| Lead Shape | No Lead |
