| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 5.8 | |
| 20@10V | |
| 8.6@4.5V|17@10V | |
| 17 | |
| 785@20V | |
| 2600 | |
| 4 | |
| 23 | |
| 17 | |
| 11 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTMS5838NLR2G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 1500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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