Analog DevicesADPA9007ACGZNRF Amplifiers

ADPA9007: DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

The ADPA9007 is a 2 W RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally-matched and DC-coupled. The ADPA9007 includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.

The ADPA9007 amplifier provides a gain of 12.5 dB, an output power for 1 dB compression (OP1dB) of 33 dBm, and an output third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The amplifier operates from a typical supply voltage of 15 V and has a 500 mA typical quiescent bias current, which is adjustable.

The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. The amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm, lead frame chip scale package, premolded cavity [LFCSP_CAV] and is specified for operation from −40°C to +85°C.

Key Features and Benefits

• •  Wideband, internally-matched, RF power amplifier
• •  DC-coupled input and output
• •  Integrated RF power detector
• •  Integrated temperature sensor
• •  Gain: 12.5 dB typical at 2 GHz to 16 GHz
• •  OP1dB: 33 dBm typical at 2 GHz to 16 GHz
• •  P_SAT: 34 dBm typical at 2 GHz to 16 GHz
• •  OIP3: 45 dBm typical at 2 GHz to 16 GHz
• •  32-Lead, 5.00 mm × 5.00 mm, LFCSP_CAV package

Applications

• •  Electronic warfare
• •  Radar
• •  Test and measurement equipment

Evaluation Board

The ADPA9007 can be evaluated with the ADPA9007-EVALZ.

Block Diagrams and Tables