Diodes IncorporatedZXTN25100DFHTA通用双极型晶体管
Trans GP BJT NPN 100V 2.5A 1810mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 180 | |
| 100 | |
| 7 | |
| -55 to 150 | |
| 0.5 | |
| 1@250mA@2.5A | |
| 0.17@10mA@0.5A|0.095@100mA@1A|0.33@250mA@2.5A | |
| 2.5 | |
| 50 | |
| 300@10mA@2V|120@0.5A@2V|40@1A@2V | |
| 1810 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.98 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Jump-start your electronic circuit design with this versatile NPN ZXTN25100DFHTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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