| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 150 | |
| 60 | |
| 7 | |
| 1.05@200mA@4A | |
| 0.03@5mA@100mA|0.055@100mA@1A|0.065@50mA@1A|0.13@50mA@2A|0.21@200mA@5A | |
| 4.5 | |
| 100@10mA@1V|100@2A@1V|55@5A@1V|20@10A@1V | |
| 710 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 3.9 |
| Package Width | 2.28 |
| Package Length | 4.57 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
The versatility of this NPN ZXTN2010A GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 710 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.