GP BJT

ZXTN2010A

Trans GP BJT NPN 60V 4.5A 710mW 3-Pin E-Line

Diodes Incorporated

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  LTB

• HTS

  8541.21.00.75

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  150

• Maximum Collector-Emitter Voltage (V)

  60

• Maximum Base-Emitter Voltage (V)

  7

• Maximum Base-Emitter Saturation Voltage (V)

  1.05@200mA@4A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.03@5mA@100mA|0.055@100mA@1A|0.065@50mA@1A|0.13@50mA@2A|0.21@200mA@5A

• Maximum DC Collector Current (A)

  4.5

• Minimum DC Current Gain

  100@2A@1V|100@10mA@1V|55@5A@1V|20@10A@1V

• Maximum Power Dissipation (mW)

  710

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Through Hole

• Package Height

  3.9

• Package Width

  2.28

• Package Length

  4.57

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  E-Line

• Pin Count

  3

• Lead Shape

  Through Hole