| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Single Dual Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 170 |
| Maximum Gate-Source Voltage (V) | ±40 |
| Maximum Gate Threshold Voltage (V) | 4.4 |
| Maximum Continuous Drain Current (A) | 60 |
| Maximum Gate-Source Leakage Current (nA) | 4000 |
| Maximum IDSS (uA) | 4000 |
| Typical Input Capacitance @ Vds (pF) | 1580@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 65@50V |
| Typical Output Capacitance @ Vds (pF) | 810@50V |
| Maximum Power Dissipation (mW) | 1350000 |
| Maximum Output Power (W) | 600 |
| Typical Power Gain (dB) | 21 |
| Maximum Frequency (MHz) | 80 |
| Typical Drain Efficiency (%) | 45 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Packaging | Box |
| Mounting | Screw |
| Package Height | 7.62 mm |
| Package Width | 25.4 mm |
| Package Length | 38.1 mm |
| PCB changed | 4 |
| Supplier Package | Case T-2 |
| Pin Count | 4 |
