Microchip TechnologyVP2106N3-GMOSFETs
Trans MOSFET P-CH Si 60V 0.25A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3.5 | |
| 0.25 | |
| 12000@10V | |
| 45@25V | |
| 22 | |
| 740 | |
| 4 | |
| 5 | |
| 5 | |
| 4 | |
| -55 | |
| 150 | |
| Bag | |
| 9000@10V|11000@5V | |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| Package Width | 4.19(Max) |
| Package Length | 5.21(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| 3 | |
| Lead Shape | Formed |
Compared to traditional transistors, VP2106N3-G power MOSFETs, developed by Microchip Technology, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 740 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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