| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.4 | |
| 1.7 | |
| 100 | |
| 50 | |
| 350@10V | |
| 300@25V | |
| 6000 | |
| 30 | |
| 10 | |
| 50 | |
| 10 | |
| -55 | |
| 150 | |
| Bag | |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| Package Height | 6.6(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| 3 | |
| Lead Shape | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The VN2210N2 power MOSFET from Microchip Technology provides the solution. Its maximum power dissipation is 6000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with dmos technology.
| EDA / CAD Models |
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