| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 60 | |
| 7 | |
| 1.1@400mA@4A|3@3.3A@10A | |
| 15 | |
| 20@4A@4V|5@10A@4V | |
| 90000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21.08(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP TIP2955G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 90000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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