STMicroelectronicsSTN851通用双极型晶体管

Trans GP BJT NPN 60V 5A 1600mW 4-Pin(3+Tab) SOT-223 T/R

The three terminals of this NPN STN851 GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1600 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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库存总量: 26,000 个零件

Regional Inventory: 9,000

    Total$828.60Price for 3000

    9,000 In stock: 可以在 2 天内配送

    • (1000)

      可以在 2 天内配送

      Ships from:
      美国
      Date Code:
      2309+
      Manufacturer Lead Time:
      14 星期
      Country Of origin:
      中国
      • In Stock: 9,000
      • Price: $0.2762
    • (1000)

      可以在 4 天内配送

      Ships from:
      荷兰
      Date Code:
      2514+
      Manufacturer Lead Time:
      14 星期
      Country Of origin:
      中国
      • In Stock: 17,000
      • Price: $0.2377

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