STMicroelectronicsSTGW30H65FBIGBT 芯片
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.55 | |
| 60 | |
| 0.25 | |
| 260 | |
| -55 | |
| 175 | |
| Industrial | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 20.15(Max) |
| Package Width | 5.15(Max) |
| Package Length | 15.75(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
Don't be afraid to step up the amps in your device when using this STGW30H65FB IGBT transistor from STMicroelectronics. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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