| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 产品类别 | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 2 |
| Maximum Drain-Source Resistance (mOhm) | 300@10V |
| Typical Gate Charge @ Vgs (nC) | 6@10V |
| Typical Input Capacitance @ Vds (pF) | 150@10V |
| Maximum Power Dissipation (mW) | 1600 |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 25 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Automotive |
| Mounting | Surface Mount |
| Package Width | 1.7 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Supplier Package | UFM |
| Pin Count | 3 |
