| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Obsolete |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| 产品类别 | Power MOSFET |
| Configuration | Single Triple Source |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 60 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 85@10V |
| Typical Gate Charge @ Vgs (nC) | 26.5@10V |
| Typical Gate Charge @ 10V (nC) | 26.5 |
| Typical Input Capacitance @ Vds (pF) | 912@30V |
| Minimum Gate Threshold Voltage (V) | 1.5 |
| Typical Output Capacitance (pF) | 100 |
| Maximum Power Dissipation (mW) | 45000 |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 13 |
| Typical Turn-Off Delay Time (ns) | 36 |
| Typical Turn-On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Temperature Grade | Automotive |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 25 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 70 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Mounting | Surface Mount |
| Package Height | 1.07 mm |
| Package Width | 4.37 mm |
| Package Length | 4.9 mm |
| PCB changed | 4 |
| Tab | Tab |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO |
| Pin Count | 5 |
| Lead Shape | Gull-wing |
