Infineon Technologies AGSPD04N50C3ATMA1MOSFETs
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 3.9 | |
| 4.5 | |
| 100 | |
| 1 | |
| 950@10V | |
| 22@10V | |
| 22 | |
| 470@25V | |
| 50000 | |
| 10 | |
| 5 | |
| 70 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Compared to traditional transistors, SPD04N50C3ATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 50000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.
| EDA / CAD Models |
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