25-50% 折扣
VishaySIZ710DT-T1-GE3MOSFETs
Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| 0.18um | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±20 | |
| 16@Channel 1|30@Channel 2 | |
| 6.8@10V@Channel 1|3.3@10V@Channel 2 | |
| 11.5@10V|6.9@4.5V@Channel 1|38@10V|18.2@4.5V@Channel 2 | |
| 11.5@Channel 1|38@Channel 2 | |
| 820@10V@Channel 1|2310@10V@Channel 2 | |
| 3900@Channel 1|4600@Channel 2 | |
| 12 | |
| 15 | |
| 20@Channel 1|30@Channel 2 | |
| 15@Channel 1|25@Channel 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 6 mm |
| Package Length | 3.73 mm |
| PCB changed | 6 |
| Supplier Package | PowerPAIR |
| 6 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SIZ710DT-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 3900@Channel 1|4600@Channel 2 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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