| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 产品类别 | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 800 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Continuous Drain Current (A) | 15 |
| Maximum Drain-Source Resistance (mOhm) | 29@10V |
| Typical Gate Charge @ Vgs (nC) | 41@10V |
| Typical Input Capacitance @ Vds (pF) | 1260@100V |
| Maximum Power Dissipation (mW) | 179000 |
| Typical Fall Time (ns) | 31 |
| Typical Rise Time (ns) | 23 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Typical Turn-On Delay Time (ns) | 21 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
