| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 4.5 | |
| 116@4.5V | |
| 4.9@4.5V|8.4@8V | |
| 8.4 | |
| 1.2 | |
| 0.75 | |
| 20 | |
| 345@10V | |
| 65 | |
| 1800 | |
| 10 | |
| 45 | |
| 20 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 96@4.5V|126@2.5V|165@1.8V | |
| Mounting | Surface Mount |
| Package Height | 0.75 mm |
| Package Width | 2.05 mm |
| Package Length | 2.05 mm |
| PCB changed | 6 |
| Supplier Package | PowerPAK SC-70 |
| 6 | |
| Lead Shape | No Lead |
Use Vishay's SIA811ADJ-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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