The new Si82Ex family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET, IGBT, SiC, and GaN. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, dual channels with universal or high-side/low-side configuration, and assorted UVLOs suitable for the power switch type being driven. With outstanding isolation ratings of up to 6kV and compliance to VDE 60747-17, AEC-Q100 qualifications and automotive-grade options, and a variety of popular packaging options, this device family has a match for your isolated gate drive needs.
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | Yes |
| PPAP | No |
| High Side|Low Side | |
| Non-Inverting | |
| Half Bridge | |
| 2 | |
| Independent | |
| GaNFET|IGBT|MOSFET|SiCFET | |
| 2 | |
| 8.3(Typ) | |
| 8.6(Typ) | |
| 30(Typ) | |
| CMOS | |
| 5 | |
| 30 | |
| 2.04(Typ) | |
| 7.5(Max) | |
| 3.75(Min) | |
| 7.5(Typ) | |
| 0.7|1 | |
| -40 | |
| 125 | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 2.35(Max) |
| Package Width | 7.5 |
| Package Length | 10.3 |
| PCB changed | 14 |
| Standard Package Name | SO |
| Supplier Package | SOIC W |
| 14 |
| EDA / CAD Models |
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