Si828x isolated gate drivers are ideal for driving Silicon Carbide (SiC) FETs, IGBTs, and silicon MOSFETs in a wide variety of inverter and electric vehicle systems. Si828x devices are isolated, high current gate drivers with integrated system safety and feedback functions. Based on our proprietary silicon isolation technology, the drivers support up to 5.0 kV RMS withstand voltage per UL1577.
Key Features and Benefits
- • Desaturation detection and fault reporting, ultra fast (< 1µs) short circuit response prevents FET damage, reduces equipment downtime & indicates faults, and enables fault clearing
- • Optional integrated dc-dc supports local positive and negative gate voltages for simplified PCB design, reduced component count and cost
Applications
- • DC Fast Chargers
- • High Power Motor Drives
- • UPS
- • EV/HEV
| Compliant | |
| EAR99 | |
| Preliminary | |
| EA | |
| Mounting | Surface Mount |
| Package Height | 2.05(Min) |
| Package Width | 7.5 |
| Package Length | 15.4 |
| PCB changed | 24 |
| Supplier Package | SOIC W |
| 24 |
| EDA / CAD Models |
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