| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 60 | |
| 3.5@10V | |
| 34@4.5V|75@10V | |
| 75 | |
| 5300@15V | |
| 5400 | |
| 23 | |
| 18 | |
| 50 | |
| 43 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 5.89 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
Increase the current or voltage in your circuit with this SI7742DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 5400 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。