VishaySI7115DN-T1-GE3MOSFETs
Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±20 | |
| 8.9 | |
| 295@10V | |
| 23.2@6V|27.5@10V | |
| 27.5 | |
| 1190@50V | |
| 3700 | |
| 34|35 | |
| 95|28 | |
| 38|52 | |
| 11|20 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 3.05 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Make an effective common source amplifier using this SI7115DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。