onsemiSBC817-40LT3G通用双极型晶体管

Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN SBC817-40LT3G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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Quantity Increments of 10000 Minimum 50000
  • Manufacturer Lead Time:
    41 星期
    • Price: $0.0295
    1. 50000+$0.0295
    2. 70000+$0.0284
    3. 100000+$0.0274
    4. 250000+$0.0250

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